Effect of laser-induced defects on luminescence in InP crystals
Identifieur interne : 015A52 ( Main/Repository ); précédent : 015A51; suivant : 015A53Effect of laser-induced defects on luminescence in InP crystals
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Abstract
Experimental data on luminescence in laser-modified InP crystals are compared with the theory of radiative recombination of heavily doped, compensated semiconductors. It is established that the band with maximum at 1.35eV observed at 77K is due to radiative transitions through the tails of the density of states which are formed as a result of the random distribution of defects and impurities showing up after laser treatment. The effective depth of the tails of the density of states is estimated to be equal to 67meV. © 1998 American Institute of Physics.
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Dzhumamukhambetov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Atyrau University, 465000 Atyrau, Kazakhstan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">Kazakhstan</country><wicri:regionArea>Atyrau University, 465000 Atyrau</wicri:regionArea><wicri:noRegion>465000 Atyrau</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">98-0529486</idno><date when="1998-11">1998-11</date><idno type="stanalyst">PASCAL 98-0529486 AIP</idno><idno type="RBID">Pascal:98-0529486</idno><idno type="wicri:Area/Main/Corpus">015E70</idno><idno type="wicri:Area/Main/Repository">015A52</idno></publicationStmt><seriesStmt><idno type="ISSN">1063-7826</idno><title level="j" type="abbreviated">Semiconductors</title><title level="j" type="main">Semiconductors</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Defect states</term><term>Electronic density of states</term><term>Experimental study</term><term>Heavily doped semiconductors</term><term>III-V semiconductors</term><term>Impurity states</term><term>Indium compounds</term><term>Laser beam effects</term><term>Photoluminescence</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7855C</term><term>6180B</term><term>7120N</term><term>7155E</term><term>Etude expérimentale</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Effet faisceau laser</term><term>Semiconducteur fortement dopé</term><term>Densité état électron</term><term>Etat défaut</term><term>Etat impureté</term><term>Photoluminescence</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Experimental data on luminescence in laser-modified InP crystals are compared with the theory of radiative recombination of heavily doped, compensated semiconductors. 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